Publications

2024: Investigation of atomic layer deposition methods of Al2O3 on n-GaN

 

2024: Effects of the LPCVD Gate Dielectric Deposition Temperature on GaN MOSFET Channels and the Root Causes at the SiO2-GaN-Interface

 

2024: Improving the Efficiency of an Isolated Bidirectional Dual Active Bridge DC–DC Converter Using Variable Frequency

 

2024: Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

 

2023: Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

 

2023: Demonstration of avalanche capability in 800 V vertical GaN-on-Silicon diodes

 

2023: Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors

  • Authors: N. Zagni, M. Fregolent, G. Verzellesi, A. Marcuzzi, C. De Santi, G. Meneghesso, E. Zanoni, E. Bahat Treidel, E. Brusaterra, O. Hilt, M. Meneghini, P. Pavan
  • Partner: IUNET, FBH
  • Published: November 2023
  • https://ieeexplore.ieee.org/document/10329308

 

2023: Enhanced asymmetrical modulation for half-bridge series resonant inverters in induction heating applications

 

2023: Towards Vertical GaN Power Transistors on Foreign Substrates: The European YESvGaN Project

 

2023: Asymmetric Resonant Tank Design for a Bidirectional CLLC Resonant Converter in G2V and V2G Operation

 

2023: Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques

 

2023: Thermal management of vertical GaN transistors

 

2023: Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through Pn-Diodes

 

2022: Unique features of FLEXion® tool for wide band gap and III–V semiconductor devices fabrication

 

2022: Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN

 

2022: Embedding Solutions for vertical SiC and GaN Power Devices

 

2022: Impact of Gate Dielectric Deposition Temperature on p-type Inversion Channel MOSFETs fabricated on GaN-on-Si

 

2022: Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs

 

2022: Process challenges and perspectives of vertical GaN power transistors on foreign substrates

 

2022: Local substrate removal for next generation GaN-on-Silicon power transistors

 

2022: A High-Efficiency High-Power-Density SiC-Based Portable Charger for Electric Vehicles

  • Authors: S. Ditze, S. Ehrlich, N. Weitz, M. Sauer, F. Aßmus, A. Sacher, C. Joffe, C. Seßler, P.
  • Partner: FhG IISB (and further organization)
  • Published: June 8, 2022; Electronics
  • https://www.mdpi.com/2079-9292/11/12/1818

 

2022: Areal Vertical Transmission Line Model Measurement for Drift Region Characterization in Vertical GaN Based Devices

 

2022: A resonant push–pull DC–DC converter with an intrinsic current source behavior for radio frequency power conversion

 

2022: Cu-Cu Thermocompression Bonding with Cu-Nanowire Films for Power Semiconductor Die-Attach on DBC Substrates

  • Authors: Z. Yu; Y. Z. Tan; C. F. Bayer; H. Rauh; A. Schletz; M. März; O. Birlem
  • Partner: FhG IISB, NW
  • Published: January 5, 2022; IEEE 23rd Electronics Packaging Technology Conference (EPTC)
  • https://ieeexplore.ieee.org/document/9663890

 

2021: GaN-based power devices: physics, reliability and perspectives (Tutorial)

  • Authors: M. Meneghini, C. De Santi, I. Abid, M. Buffolo, M. Cioni, R. A. Khadar, L. Nela, N. Zagni, A. Chini, F. Medjdoub, G. Meneghesso, G. Verzellesi, E. Zanoni, E. Matioli
  • Partner: IUNET, CNRS (and further organizations)
  • Published: November 8, 2021; Journal of Applied Physics
  • https://aip.scitation.org/doi/10.1063/5.0061354