Publications

2024: Utilizing Island Growth in Superlattice Buffers for the Realization of Thick GaN-on-Si(111) PIN-Structures for Power Electronics

• Authors: S. Michler, S. Thapa, S. Besendörfer, M. Albrecht, R. Weingärtner, E. Meissner
• Partner: Siltronic, IISB
• Published: March 2024
• https://onlinelibrary.wiley.com/doi/full/10.1002/pssb.202400019

2024: Investigation of atomic layer deposition methods of Al₂O₃ on n-GaN

• Authors: L. Tadmor, S. S. T. Vandenbroucke, E. Bahat Treidel, E. Brusaterra, P. Plate, N. Volkmer, F. Brunner, C. Detavernier, J. Würfl, O. Hilt
• Partner: FBH, UGent
• Published: February 2024
• https://pubs.aip.org/aip/jap/article/135/8/085701/3266908/Investigation-of-atomic-layer-deposition-methods

2024: Effects of the LPCVD Gate Dielectric Deposition Temperature on GaN MOSFET Channels and the Root Causes at the SiO₂-GaN-Interface

• Authors: M. Henn, C. Huber, D. Scholten, N. Kaminski
• Partner: Bosch
• Published: January 2024
• https://ieeexplore.ieee.org/document/10384349

2024: Improving the Efficiency of an Isolated Bidirectional Dual Active Bridge DC–DC Converter Using Variable Frequency

• Authors: V. Esteve, J. L. Bellido, J. Jordán, E. J. Dede
• Partner: UVEG, SiCtech
• Published: January 2024
• https://www.mdpi.com/2079-9292/13/2/294

2024: Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

• Authors: M. Buffolo, D. Favero, A. Marcuzzi,C. De Santi, G. Meneghesso, E. Zanoni and M. Meneghini
• Partner: IUNET
• Published: January 2024
• https://ieeexplore.ieee.org/abstract/document/10388225

2023: Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

• Authors: N. Zagni, M. Fregolent, A. Del Fiol, D. Favero, F. Bergamin, G. Verzellesi, C. De Santi, G. Meneghesso, E. Zanoni, C. Huber, M. Meneghini, P. Pavan
• Partner: IUNET, Bosch
• Published: December 2023
• http://www.jos.ac.cn/en/article/id/a0d45b9e-d0d0-48f2-8340-c97c97f2d6b7

2023: Demonstration of avalanche capability in 800 V vertical GaN-on-Silicon diodes

• Authors: Y. Hamdaoui, I. Abid, S. Michler, K. Ziouche, F. Medjdoub
• Partner: CNRS, Siltronic
• Published: November 2023 (as accepted manuscript)
• https://iopscience.iop.org/article/10.35848/1882-0786/ad106c

2023: Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al₂O₃/GaN MOS Capacitors

• Authors: N. Zagni, M. Fregolent, G. Verzellesi, A. Marcuzzi, C. De Santi, G. Meneghesso, E. Zanoni, E. Bahat Treidel, E. Brusaterra, O. Hilt, M. Meneghini, P. Pavan
• Partner: IUNET, FBH
• Published: November 2023
• https://ieeexplore.ieee.org/document/10329308

2023: Threshold voltage instability in SiO2-gate semi-vertical GaN trench MOSFETs grown on silicon substrate

• Authors: M. Fregolent, A. Del Fiol, C. De Santi, C. Huber, G. Meneghesso, E. Zanoni, M. Meneghini
• Partner: IUNET, Bosch
• Published: October 2023
• https://www.sciencedirect.com/science/article/pii/S0026271423002305

2023: Enhanced asymmetrical modulation for half-bridge series resonant inverters in induction heating applications

• Authors: V. Esteve, J. Jordán, E. J. Dede, J. L. Bellido
• Partner: UVEG, SiCtech
• Published: August 2023
• https://ietresearch.onlinelibrary.wiley.com/doi/full/10.1049/pel2.12573

2023: Towards Vertical GaN Power Transistors on Foreign Substrates: The European YESvGaN Project

• Authors: C. Huber, M. Reimer, S. Regensburger, M. Henn, T. Kaden, J. Baringhaus
• Partner: Bosch
• Published: July 2023
• https://ieeexplore.ieee.org/abstract/document/10172965

2023: Asymmetric Resonant Tank Design for a Bidirectional CLLC Resonant Converter in G2V and V2G Operation

• Authors: S. Ditze, S. Ehrlich, D. Happel, A. Rosskopf
• Partner: FhG IISB
• Published: May 2023
• https://ieeexplore.ieee.org/document/10131351

2023: Trapping in Al₂O₃/GaN MOScaps investigated by fast capacitive techniques

• Authors: M. Fregolent, A. Marcuzzi, C. De Santi, E. Bahat Treidel, G. Meneghesso, E. Zanoni, M. Meneghini
• Partner: IUNET, FBH
• Published: May 2023
• https://ieeexplore.ieee.org/document/10117719

2023: Thermal management of vertical GaN transistors

• Authors: L. Mitterhuber, V. Leitgeb, M. Krainz, R. Strauss, T. Kaden, E. Bahat Treidel, F. Brunner, C. Huber, E. Kraker
• Partner: MCL, Bosch, FBH
• Published: April 2023
• https://ieeexplore.ieee.org/document/10100765

2023: Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through Pn-Diodes

• Authors: E. Brusaterra, E. Bahat Treidel, F. Brunner, M. Wolf, A. Thies, J. Würfl, O. Hilt
• Partner: FBH
• Published: January 2023
• https://ieeexplore.ieee.org/abstract/document/10005283

2022: Unique features of FLEXion® tool for wide band gap and III–V semiconductor devices fabrication

• Authors: F. Torregrosa, G. Mathieu, G. Boccheciampe, S. Morata, B. Roux
• Partner: IBS
• Published: December 2022
• https://link.springer.com/article/10.1557/s43580-022-00447-4

2022: Effects of post metallization annealing on Al₂O₃ atomic layer deposition on n-GaN

• Authors: L. Tadmor, E. Brusaterra, E. Bahat Treidel, F. Brunner, N. Bickel, S. Vandenbroucke, C. Detavernier, J. Wuerfl, O. Hilt.
• Partner: FBH, UGent
• Published: November 2022
• https://iopscience.iop.org/article/10.1088/1361-6641/aca42a

2022: Embedding Solutions for vertical SiC and GaN Power Devices

• Authors: H. Linh Bach, A. Huang, H. Rauh, A. Schletz, M. P. M. Jank, M. März
• Partner: FhG IISB (and further organizations)
• Published: November 2022
• https://ieeexplore.ieee.org/document/9955257

2022: Impact of Gate Dielectric Deposition Temperature on p-type Inversion Channel MOSFETs fabricated on GaN-on-Si

• Authors: M. Henn, C. Huber
• Partner: Bosch
• Published: November 2022
• https://ieeexplore.ieee.org/document/9936574

2022: Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs

• Authors: M. Fregolent, M. Boito, A. Marcuzzi, C. De Santi, F. Chiocchetta, E. Bahat Treidel, M. Wolf, F. Brunner, O. Hilt, J. Würfl, G. Meneghesso, E. Zanoni, M. Meneghini
• Partner: IUNET, FBH
• Published: November 2022
• https://www.sciencedirect.com/science/article/abs/pii/S0026271422001688?via%3Dihub

2022: Process challenges and perspectives of vertical GaN power transistors on foreign substrates

• Authors: C. Huber, S. Regensburger, E. Bahat-Treidel, F Medjdoub, Jens Baringhaus
• Partner: Bosch, FBH, CNRS
• Published: October 2022
• https://hal.science/hal-03829109/document

2022: Local substrate removal for next generation GaN-on-Silicon power transistors

• Authors: Y. Hamdaoui, I. Abid, K. Ziouche, F. Medjdoub
• Partner: CNRS
• Published: October 2022
• https://hal.science/hal-03828927/document

2022: A High-Efficiency High-Power-Density SiC-Based Portable Charger for Electric Vehicles

• Authors: S. Ditze, S. Ehrlich, N. Weitz, M. Sauer, F. Aßmus, A. Sacher, C. Joffe, C. Seßler, P.
• Partner: FhG IISB (and further organization)
• Published: June 8, 2022; Electronics
• https://www.mdpi.com/2079-9292/11/12/1818

2022: Areal Vertical Transmission Line Model Measurement for Drift Region Characterization in Vertical GaN Based Devices

• Authors: E. Bahat Treidel , M. Wolf, F. Brunner, O. Hilt and J. Würfl
• Partner: FBH
• Published: May, 2022; CS MANTECH Conference
• https://csmantech.org/wp-content/acfrcwduploads/field_5e8cddf5ddd10/post_6546/14.2_Areal_Vertical_Transmission_Line_Model_Measurement_for_Drift.pdf

2022: A resonant push–pull DC–DC converter with an intrinsic current source behavior for radio frequency power conversion

• Authors: N. Weitz, S. Utzelmann, S. Ditze; M. März
• Partner: FhG IISB
• Published: January 13, 2022; IEEE Transactions on Power Electronics
• https://ieeexplore.ieee.org/document/9681301

2022: Cu-Cu Thermocompression Bonding with Cu-Nanowire Films for Power Semiconductor Die-Attach on DBC Substrates

• Authors: Z. Yu; Y. Z. Tan; C. F. Bayer; H. Rauh; A. Schletz; M. März; O. Birlem
• Partner: FhG IISB, NW
• Published: January 5, 2022; IEEE 23rd Electronics Packaging Technology Conference (EPTC)
• https://ieeexplore.ieee.org/document/9663890

2021: GaN-based power devices: physics, reliability and perspectives (Tutorial)

• Authors: M. Meneghini, C. De Santi, I. Abid, M. Buffolo, M. Cioni, R. A. Khadar, L. Nela, N. Zagni, A. Chini, F. Medjdoub, G. Meneghesso, G. Verzellesi, E. Zanoni, E. Matioli
• Partner: IUNET, CNRS (and further organizations)
• Published: November 8, 2021; Journal of Applied Physics
• https://aip.scitation.org/doi/10.1063/5.0061354